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GenX3TM 600V IGBT
Medium speed low Vsat PT IGBTs 5-40 kHz switching
IXGA48N60B3 IXGP48N60B3 IXGH48N60B3
VCES = 600V IC110 = 48A VCE(sat) 1.8V
TO-263 (IXGA)
Symbol
VCES VCGR VGES VGEM IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight
Test Conditions
TC = 25C to 150C TJ = 25C to 150C, RGE = 1M Continuous Transient TC = 110C TC = 25C, 1ms VGE = 15V, TVJ = 125C, RG = 5 Clamped inductive load @ 600V TC = 25C
Maximum Ratings
600 600 20 30 48 280 ICM = 120 300 -55 ... +150 150 -55 ... +150 V V V V A A A W C C C C C Nm/lb.in. g g g
G G
G E (TAB)
TO-220 (IXGP)
C
(TAB) E
TO-247 (IXGH)
C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247)(TO-220) TO-263 TO-220 TO-247
300 260 1.13/10 2.5 3.0 6.0
E
(TAB)
G = Gate E = Emitter Features
C = Collector TAB = Collector
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Optimized for low conduction and switching losses Square RBSOA International standard packages Advantages
Symbol Test Conditions
(TJ = 25C unless otherwise specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250A, VGE = 0V IC = 250A, VCE = VGE VCE = VCES VGE = 0V VCE = 0V, VGE = 20V IC = 32A, VGE = 15V, Note 1 TJ = 125C
Characteristic Values
Min. 600 3.0 5.0 Typ. Max. V V 25 A 250 A 100 nA 1.8 V
High power density Low gate drive requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts
(c) 2008 IXYS CORPORATION, All rights reserved
DS99938A(05/08)
IXGA48N60B3 IXGP48N60B3 IXGH48N60B3
Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs
Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCS (TO-247) (TO-220) 0.25 0.50 Inductive Load, TJ = 125C IC = 30A, VGE = 15V VCE = 480V, RG = 5 Inductive Load, TJ = 25C IC = 30A, VGE = 15V VCE = 480V, RG = 5 IC = 40A, VGE = 15V, VCE = 0.5 * VCES VCE = 25V, VGE = 0V, f = 1MHz IC = 30A, VCE = 10V, Note 1
Characteristic Values Min. Typ. Max.
28 46 3980 170 45 115 21 40 22 25 0.84 130 116 0.66 19 25 1.71 190 157 1.30 200 200 1.20 S pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.42 C/W C/W C/W
TO-247 (IXGH) Outline
P
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-220 (IXGP) Outline
Note 1: Pulse test, t 300s; duty cycle, d 2%.
TO-263 (IXGA) Outline
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Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXGA48N60B3 IXGP48N60B3 IXGH48N60B3
Fig. 1. Output Characteristics @ 25C
80 70 60 210 50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 7V VGE = 15V 13V 11V 300 270 9V 240 VGE = 15V 13V 11V
Fig. 2. Extended Output Characteristics @ 25C
IC - Amperes
IC - Amperes
180 150 120 90 60
9V
7V
5V
30 0 0 2 4 6 8 10 12 14 16
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics @ 125C
80 70 60 VGE = 15V 13V 11V 9V 1.4 1.3
Fig. 4. Dependence of VCE(sat) on Junction Temperature
VGE = 15V I = 80A
VCE(sat) - Normalized
1.2 1.1
C
IC - Amperes
50 40 30 20 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4
7V
I 1.0 0.9 0.8 0.7
C
= 40A
5V
I
C
= 20A
2.8
-50
-25
0
25
50
75
100
125
150
VCE - Volts
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TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage
3.8 3.6 3.4 3.2 I = 80A 40A 20A TJ = 25C 200 180 160
C
Fig. 6. Input Admittance
IC - Amperes
3.0
140 120 100 80 60 40 20 0 TJ = 125C 25C - 40C
VCE - Volts
2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 5 6 7 8
9
10
11
12
13
14
15
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
VGE - Volts
VGE - Volts
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA48N60B3 IXGP48N60B3 IXGH48N60B3
Fig. 7. Transconductance
80 TJ = - 40C 70 60 14 12 16 VCE = 300V I C = 40A I G = 10mA
Fig. 8. Gate Charge
g f s - Siemens
25C
40 30 20 10 0 0 20 40 60
125C
VGE - Volts
100 120 140
50
10 8 6 4 2 0
80
0
20
40
60
80
100
120
IC - Amperes
QG - NanoCoulombs
Fig. 9. Capacitance
10,000 140 120
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
Cies
IC - Amperes
1,000
100 80 60 40
Coes 100
TJ = 125C RG = 5 dV / dt < 10V / ns
f = 1 MHz
10 0
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Cres
20 0 100
5
10
15
20
25
30
35
40
150
200
250
300
350
400
450
500
550
600
650
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1.00
Z(th)JC - C / W
0.10
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_48N60B3D1(56) 05-05-08-A
IXGA48N60B3 IXGP48N60B3 IXGH48N60B3
Fig. 12. Inductive Switching Energy Loss vs. Gate Resistance
4.5 4.0 3.5 5.0 4.5 4.0 3.5 Eoff VCE = 480V I C = 30A Eon 3.5 3.0 2.5 2.0 1.5 TJ = 25C 1.0 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 50 55 I C = 15A 1.5 1.0 0.5 0.5 0.0 15 20 25 30 35 40 45 50 55 60 0.5 0.0 1.0 Eoff VCE = 480V Eon
Fig. 13. Inductive Switching Energy Loss vs. Collector Current
3.5
I
C
= 60A
----
RG = 5 , VGE = 15V
TJ = 125C
3.0 2.5
Eoff - MilliJoules
3.0 2.5 2.0 1.5
Eoff - MilliJoules
E
E
on
on
---
- MilliJoules
TJ = 125C , VGE = 15V
3.0 2.5 2.0
2.0 1.5
- MilliJoules
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs. Junction Temperature
3.5 Eoff 3.0 2.5 2.0 I C = 30A 1.5 1.0 0.5 I C = 15A 0.0 25 35 45 55 65 75 85 95 105 115 0.0 125 1.5 1.0 0.5 VCE = 480V Eon 3.5 200 190 180
Fig. 15. Inductive Turn-off Switching Times vs. Junction Temperature
220
----
I
C
= 60A 3.0 2.5
RG = 5 , VGE = 15V
tf
VCE = 480V
td(off) - - - -
210 200
RG = 5 , VGE = 15V
t d(off) - Nanoseconds
t f - Nanoseconds
Eoff - MilliJoules
170 160 150 140 130 120 110 100 25 35 45 55 65 75 85 95 105 115 I C = 60A, 15A I
C
190 I
C
E - MilliJoules
on 2.0
= 60A, 15A
180 170 160
= 30A
150 140 130 120 125
TJ - Degrees Centigrade
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TJ - Degrees Centigrade
Fig. 16. Inductive Turn-off Switching Times vs. Collector Current
210 200 190 230 220 210 200
Fig. 17. Inductive Turn-off Switching Times vs. Gate Resistance
650 220 210 200 190
tf
VCE = 480V
td(off) - - - -
tf
VCE = 480V
td(off) - - - -
RG = 5 , VGE = 15V
TJ = 125C, VGE = 15V
600 550
t d(off) - Nanoseconds
t f - Nanoseconds
t f - Nanoseconds
180 170 160 150 140 130 120 110 100 15 20
t d(off) - Nanoseconds
190 180 170 160 150 140 130 120 0 5 10 15 20 25 30 35 40 45 50 55 I
C
500 I
C
= 60A
TJ = 125C
450 400 350
180 170 160 150 TJ = 25C 140 130 120 50 55 60
I
C
= 30A
300 250
= 15A
200 150
25
30
35
40
45
IC - Amperes
RG - Ohms
(c) 2008 IXYS CORPORATION, All rights reserved
IXGA48N60B3 IXGP48N60B3 IXGH48N60B3
Fig. 18. Inductive Turn-on Switching Times vs. Gate Resistance
110 100 90 70
Fig. 19. Inductive Turn-on Switching Times vs. Collector Current
60 55 50 28 65 60 55 50 45 40
tr
VCE = 480V
td(on) - - - -
TJ = 125C, VGE = 15V I = 60A
tr
VCE = 480V
td(on) - - - -
RG = 5 , VGE = 15V
25C < TJ < 125C
27 26
t r - Nanoseconds
80 70 60 50 40 30 20 10 0 0
t d(on) - Nanoseconds
t d(on) - Nanoseconds
C
t r - Nanoseconds
45 40 35 30 25 20 15 10 15
25 24 23
I
C
= 30A
35 30 25
TJ = 25C
22 21 20 TJ = 125C 19 18
I
C
= 15A
20 15 30 35 40 45 50 55
5
10
15
20
25
20
25
30
35
40
45
50
55
60
RG - Ohms
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs. Junction Temperature
65 60 55 50 I C = 60A 28 27 26 25
t d(on) - Nanoseconds
t r - Nanoseconds
45 40 35 30 25 20 15 10 5 25
tr
VCE = 480V
td(on) - - - -
24 23 22 I C = 30A 21 20 19
RG = 5 , VGE = 15V
I
C
= 15A
18 17
35
45
55
65
75
85
95
105
115
16 125
TJ - Degrees Centigrade
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IXYS reserves the right to change limits, test conditions and dimensions.
IXYS REF: G_48N60B3D1(56) 05-05-08-A

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